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| MICROWAVE CORPORATION HMC268LM1 V01.0900 SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz FEBRUARY 2001 Features SMT mmWAVE PACKAGE General Description The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier (LNA) in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match, preserving MMIC chip performance. Utilizing a GaAs PHEMT process the device offers 2.6 dB noise figure, 15 dB gain and +13 dBm output power from a bias supply of +4V @ 45 mA. The packaged LNA enables economical PCB SMT assembly for millimeterwave point-to-point radios, LMDS, and SATCOM applications. As an alternative to chip-and-wire hybrid assemblies the HMC268LM1 eliminates the need for wirebonding, thereby providing a consistent connection interface for the customer. All data is with the non-hermetic, epoxy sealed LM1 packaged LNA device mounted in a 50 ohm test fixture. 1 AMPLIFIERS EXCELLENT NOISE FIGURE : 15 dB GAIN 2.6 dB P1 dB OUTPUT POWER: +13 dBm SMT Guaranteed Performance, Parameter Frequency Range** Gain Noise Figure Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Voltage (Vdd) Supply Voltage (Vgg1 &Vgg2) Supply Current (Idd) Vdd = +4V*, -55 to +85 deg C Typ. 20 - 26 11 14 2.5 8 12 26 7 13 13 33 11 16 22 4.0 -0.15 45 4.25 0.0 50 23 9 14 17 3.75 -2.0 17 3.2 13 Max. Min. Typ. 26 - 30 15 2.6 7 8 28 13 17 22 4.0 -0.15 45 4.25 0.0 50 23 9 15 15 3.75 -2.0 18 3.4 12 Max. Min. Typ. 30 - 32 15 2.8 7 7 28 13 18 21 4.0 -0.15 45 4.25 0.0 50 18 3.8 Max. Units GHz dB dB dB dB dB dBm dBm dBm Vdc Vdc mA Min. 3.75 -2.0 * Vdd = +4V, adjust Vgg1 & Vgg2 between -2.0 to 0.0 Vdc to achieve Idd = 45 mA. ** Acceptable gain and NF peformance is achievable down to 17 GHz. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 28 HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz V01.0900 FEBRUARY 2001 Broadband Gain and Return Loss 20 15 10 RE S P O NS E (dB ) 5 0 -5 -10 -15 -20 -25 10 15 20 25 30 35 S21 S11 S22 Gain 20 15 GA IN (dB ) 1 AMPLIFIERS 15 20 25 FR E QUE N C Y (G Hz) 30 35 20 25 FR E QUE N C Y (G Hz) 30 35 15 20 25 FR E QUE N C Y (G Hz) 30 35 10 5 0 Isolation 0 Input Return Loss 0 IN P U T R ETUR N LO S S (dB ) REV E RS E IS O L A TIO N (dB ) -10 -5 -20 -10 -30 -15 -40 -50 15 20 25 FR E QUE N C Y (G Hz) 30 35 -20 15 Noise Figure 5 +85 C Output Return Loss 0 O UTP U T R ETU R N L OS S (dB ) 4 NOISE FIGURE (dB) -5 3 -10 2 +25 C 1 -40 C -15 0 20 22 24 26 28 30 32 34 FREQUENCY (GHz) -20 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 29 SMT FR E QUE N C Y (G Hz) HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz FEBRUARY 2001 V01.0900 Output P1dB vs. Temperature 20 Output IP3 vs. Temperature 30 THIRD ORDER INTERCEPT (dBm) -40C 25 1 P1dB OUTPUT (dBm) 18 16 14 12 10 8 6 4 2 +85C -40C +25C AMPLIFIERS 20 +25C 15 +85C 10 SMT 0 20 22 24 26 28 30 32 FREQUENCY (GHz) 20 22 24 26 28 30 32 FREQUENCY (GHz) Psat vs. Temperature 20 18 16 14 Psat (dBm) 12 10 8 6 4 2 0 20 22 24 26 28 30 32 FREQUENCY (GHz) +85C -40C +25C 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 30 HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz V01.0900 FEBRUARY 2001 Functional Diagram Absolute Maximum Ratings Supply Voltage (Vdd) Supply Current (Idd) Gate Bias Voltage (Vgg1 & 2) DC Gate Current (Igg1 & 2) Input Power (RFin) (Vdd = +4V, RF power applied <1 sec) Channel Temperature (Tc) Thermal Resistance ( (Channel Backside) Storage Temperature Operating Temperature jc) +4.5 Vdc 50 mA -2.0 to 0.0 Vdc 4 mA +15 dBm 175 oC 289 oC/W -65 to +150 oC 1 AMPLIFIERS 1 - 31 See HMC268LM1 Biasing Note Page 1 - 58 Outline 1. MATERIAL: A) PACKAGE BODY & LID: PLASTIC. B) PIN CONTACT : COPPER, 0.5 OUNCE. 2. PLATING : ELECTROLYTIC GOLD (20 TO 50 MICROINCHES TYPICAL) OVER ELECTROLYTIC NICKEL (50 MICROINCHES MINIMUM). 3. DIMENSIONS ARE IN INCHES (MILLIMETERS).UNLESS OTHERWISE SPECIFIED ALL TOLERANCES ARE 0.005 ( 0.13). 4. ALL GROUNDS MUST BE SOLDERED TO THE PCB RF GROUND. 5. SEE APPLICATION NOTE FOR RECOMMENDED ATTACHMENT TECHNIQUE TO PCB. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com SMT -55 to +85 oC HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz FEBRUARY 2001 V01.0900 HMC268LM1 Evaluation PCB 0.057 -B[1.45] 1 AMPLIFIERS C2 Suggested Ground Via Size: O0.010" (0.25) and Qty: 8 to 12 C1 0.053 [1.35] 0.018 [0.46] SMT C1 C1 0.039 [0.99] 0.078 [1.98] C2 0.018 [0.46] ALL FEATURES .003 A B C2 0.150 [3.81] LM1 Evaluation PCB Suggested LM1 PCB Land Pattern Tolerance: 0.003" (0.08 mm) The grounded Co-Planar Wave Guide (G-CPW) PCB input/output transitions allow use of Ground-SignalGround (GSG) probes for testing. Suggested probe pitch is 400m (16 mils). Alternatively, the board can be mounted in a metal housing with 2.4 mm coaxial connectors. Evaluation Circuit Board Layout Design Details Layout Technique Material Dielectric Thickness Microstrip Line Width G - CPW Line Width Micro Strip to G-CPW Rogers 4003 with 1/2 oz, Cu 0.008" ( 0.20 mm) 0.018" (0.46 mm) 0.016" (0.41 mm) G - CPW Line to GND Gap 0.005" (0.13 mm) Ground Via Hole Diamer C1 C2 0.008" (0.13 mm) 100 pF Capacitor, 0402 Pkg. 10,000 pF Capacitor, 1206 Pkg. LM1 Package Mounted to Evaluation PCB 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 32 0.086 [2.18] -A- HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz V01.0900 FEBRUARY 2001 HMC268LM1 Recommended SMT Attachment Technique Preparation & Handling of the LM1 Millimeterwave Package for Surface Mounting The HMC LM1 package was designed to be compatible with high volume surface mount PCB assembly processes. The LM1 package requires a specific mounting pattern to allow proper mechanical attachment and to optimize electrical performance at millimeterwave frequencies. This PCB layout pattern can be found on each LM1 product data sheet. It can also be provided as an electronic drawing upon request from Hittite Sales & Application Engineering. 225 200 TEMPERATURE (0C) 175 150 125 100 1 AMPLIFIERS SMT 75 Follow these precautions to avoid permanent damage: Cleanliness: Observe proper handling procedures to ensure 50 clean devices and PCBs. LM1 devices should remain in their 25 original packaging until component placement to ensure no 0 1 2 3 4 5 6 7 8 contamination or damage to RF, DC & ground contact areas. TIME (min) Static Sensitivity: Follow ESD precautions to protect against Recommended solder reflow profile ESD strikes ( see catalog page 8 - 2 ). for HMC LM1 SMT package General Handling: Handle the LM1 package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excess pressure to the top of the lid. Solder Materials & Temperature Profile: Follow the information contained in the application note. Hand soldering is not recommended. Conductive epoxy attachment is not recommended. Solder Paste Solder paste should be selected based on the user's experience and be compatible with the metallization systems used. See the LM1 data sheet Outline drawing for pin & ground contact metallization schemes. Solder Paste Application Solder paste is generally applied to the PCB using either a stencil printer or dot placement. The volume of solder paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical & electrical performance. Excess solder may create unwanted electrical parasitics at high frequencies. Solder Reflow The soldering process is usually accomplished in a reflow oven but may also use a vapor phase process. A solder reflow profile is suggested above. Prior to reflowing product, temperature profiles should be measured using the same mass as the actual assemblies. The thermocouple should be moved to various positions on the board to account for edge and corner effects and varying component masses. The final profile should be determined by mounting the thermocouple to the PCB at the location of the device. Follow solder paste and oven vendor's recommendations when developing a solder reflow profile. A standard profile will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to thermal shock. Allow enough time between reaching pre-heat temperature and reflow for the solvent in the paste to evaporate and the flux to completely activate. Reflow must then occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 15 seconds. Packages have been qualified to withstand a peak temperature of 235C for 15 seconds. Verify that the profile will not expose device to temperatures in excess of 235C. Cleaning A water-based flux wash may be used. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 33 HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz FEBRUARY 2001 V01.0900 HMC268LM1 General Biasing & Application Circuit 1 AMPLIFIERS Optimal biasing of the HMC268LM1 SMT two stage low noise amplifier Vdd, Vgg1 & Vgg2 DC ports is described below. The LNA schematic is repeated below. Note the recommended addition of the external bypass chip capacitor. For additional general MMIC amplifier biasing guidance, please refer to the Hittite Microwave "MMIC Amplifier Biasing Procedure" found on page 8-8 in our February 2000 catalog or on www.hittite.com under the Application Note section. Vdd (Pin 2) C1 C2 Recommended Component Values SMT 50 W RF IN (PIN 8) Vds1 25 W RF OUT (PIN 4) Vds2 C1 C2 100 pF 10,000 pF C1 C2 C1 C2 Vgg 1 (Pin 7) Vgg 2 (Pin 6) IMPORTANT DC LIMITS! When biasing the HMC268LM1 please note the following; A) Do Not exceed 3.5 Vdc on internal circuit nodes Vds1 and Vds2 (internal Drain to Source voltages). Calculate the Vds1&2 voltages from the LNA schematic above. B) Do Not bias Vdd, Vgg1 & Vgg2 DC ports in such a way that Vgs becomes a positive voltage (internal Gate to Source voltage). HMC268LM1 Biasing Schemes for Performance Trade-Offs The biasing may be adjusted slightly to achieve either low noise with lowest DC power consumption or low noise with highest output power. Be sure to adhere to the IMPORTANT DC LIMITS! above while optimizing performance. A) Low Noise and Low Power Consumption : Vdd = 3.5Vdc @ Idd = 30mA. Set Vgg1 = Vgg2. B) Low Noise and High Output Power : Vdd = 4.0Vdc @ Idd = 45mA. Utilizing Vgg1 & Vgg2 nominal bias is obtained for a typical Idd current of 30mA for the second or "output" stage and 15 mA for the first stage. The first step to bias the amplifier is to tune the Vgg1 = -1.0Vdc and Vgg2 to drive 30mA for the full amplifier. Then Vgg1 is reduced to obtain Idd = 45 mA of current for the amplifier. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 34 HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz V01.0900 FEBRUARY 2001 1 AMPLIFIERS 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 35 SMT |
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